姓名：张群 性别：男 出生年份： 1959年
职称：教授/博导
地址：邯郸校区先进材料楼205 联系电话：65642642 Email：zhangqun@fudan.edu.cn
简历（教育背景）
1982 复旦大学物理系电子物理专业学士学位
1992 日本东京工业大学电子物理专业硕士学位
1995 日本东京工业大学电子物理专业博士学位
1995 日本国立北陆先端科学技术大学院大学助教
1998- 复旦大学材料科学系副教授,教授
研究方向（包括任教课程）
薄膜物理与技术；透明电子学；氧化物薄膜晶体管；氧化物存储和传感材料
主讲课程：
纳米结构的检测与表征； 电子物理专业实验；透明电子学；材料科学与社会
学术任职
中国真空学会常务理事；中国真空学会副秘书长； 《无机材料学报》、《真空》和《真空科学与技术学报》学术期刊编委
近年代表性论文
在国内外学术刊物APL, JAP, JJAP, JMR, JVSTA, Thin Solid Films和真空科学与技术等发表论文七十多篇，获国家发明专利8项，实用新型专利2项，受理专利4项。近五年发表的SCI学术论文：
1.Yu Chang, Zhao Yang, Haifeng Pu, Can Cui, Li Zhang, Chengyuan Dong, and Qun Zhang*, Solution-Processed Indium-Zinc-Oxide Thin-Flim Transistors with High-k Magnesium-Titanium Oxide Dielectric, IEEE ELECTRON DEVICE LETTERS, 2014, 35(5): 557-559
2.Lan Yue, HaiFeng Pu, HongLei Li, ShuJian Pang and Qun Zhang*, Dip-coated Al-In-Zn-O thin-film transistor with poly- methylmethacrylate gate dielectric, J. Phys. D: Appl. Phys. 46 (2013) 445106 (5pp)
3.Honglei Li, Mingyue Qu, and Qun Zhang*, Influence of Tungsten Doping on the Performance of Indium Zinc Oxide Thin Film Transistors, IEEE ELECTRON DEVICE LETTERS,2013, 34(10): 1268-1270
4.Haifeng Pu, Honglei Li, Zhao Yang, Qianfei Zhou, Chengyuan Dong, and Qun Zhang*, Effect of Content Ratio on Solution-Processed High-k Titanium-Aluminum Oxide Dielectric Films, ECS Solid State Letters, 2013, 2 (10): N35-N38.
5.Haifeng Pu, Qianfei Zhou, Lan Yue, Qun Zhang*, Investigation of oxygen plasma treatment on the device performanceof solution-processed a-IGZO thin film transistors, Applied Surface Science, 2013, 283: 722 – 726.
6.Haifeng Pu, Qianfei Zhou, Lan Yue and Qun Zhang*, Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing, Semicond. Sci. Technol. 28 (2013) 105002
7.Lan Yue, Hai-Feng Pu, Hong-Lei Li, Shu-Jian Pang, Qun Zhang*, Effect of active layer thickness on device performance of a-LZTO thin-film transistors, Superlattices and Microstructures, 2013, 57: 123-128
8.Yanwei Huang*, Qun Zhang, Junhua Xi, Zhenguo Ji, Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition, Applied Surface Science, 2012, 258: 7435-7439
9.Runlai Wan, Ming Yang, Qianfei Zhou, and Qun Zhang*, Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition,. J. Vac. Sci. Technol. A, 2012, 30(6), 061508-1-5
10.Ming Yang, Haifeng Pu, Qianfei Zhou, Qun Zhang*, Transparent p-type conducting K-doped NiO films deposited by pulsed plasma deposition, Thin Solid Films, 2012, 520, 5884-5888
11.Lan Yue, Haifeng Pu, Shujian Pang, Honglei Li and Qun Zhang*, Top-gate LZTO thin-film transistors with PMMA gate insulator by solution process, EPL, 97 (2012) 67006
12.Yao Qijun 1,2, Li Shuxin1 and Zhang Qun2, Study of Ti Addition in Channel Layers for In-Zn-O Thin Film Transistors, Applied Surface Science, 2011, 258: 1460-1463
13.Haifeng Pu, Guifeng Li, Jiahan Feng, Baoying Liu and Qun Zhang*, Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers, Semicond. Sci. Technol. 26 (2011) 095004
14.Qijun Yao, Shuxin Liand Qun Zhang*, Influences of channel metallic composition on indium zinc oxide thin-film transistor performance, Semicond. Sci. Technol. 26 (2011) 085011
15.Ming Yang, Zhan Shi, Jiahan Feng, Haifeng Pu, Guifeng Li, Jun Zhou, Qun Zhang*, Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition, Thin Solid Films, 2011, 519: 3021–3025
16.G.F. Li, J. Zhou, Y.W. Huang, M. Yang, J.H. Feng and Q. Zhang*, Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature, Vacuum, 2010, 85: 22-25
17.Yanwei Huang, Dezeng Li, Jiahan Feng, Guifeng Li and Qun Zhang*, Transparent conductive tungsten-doped tin oxide thin films synthesized by sol–gel technique on quartz glass substrates”, J Sol-Gel Sci Technol., (2010) 54: 276–281
18.Yanwei Huang, Guifeng Li, Jiahan Feng, Qun Zhang, “Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films”, Thin Solid Films, 2010, 518: 1892-1896
