题目：Advanced Foundry CMOS Technology: From Planar Into The Multi-Gate Era

报告人：Dr. Matthias Goldbach, GLOBALFOUNDRIES

时间：2011年12月5日上午10:00-11:00

地点：邯郸校区净化楼B213

Abstract

Foundries provide customers with leading-edge technology, on schedule, and to specifications co-optimized with the customer. Their technology is SoC focused with large variety of active and passive devices to fulfill customers’ needs. Planar CMOS on a bulk substrate has been the workhorse of the foundry industry for both high performance and low power products. Further scaling of this technology is demanding; a change in concept is required for future technology nodes. This presentation discusses multi-gate and single gate approaches that have been proposed in literature. Compatibility with SoC requirements, manufacturability, scalability, and market-options are compared and evaluated.